By Dietmar Kissinger
ISBN-10: 1461422892
ISBN-13: 9781461422891
ISBN-10: 1461422906
ISBN-13: 9781461422907
The booklet offers the research and layout of built-in car radar receivers in Silicon-Germanium know-how, to be used in complicated multi-channel radar transceiver front-ends within the 77GHz frequency band. the most emphasis of the paintings is the conclusion of high-linearity and low-power modular receiver channels in addition to the research of millimeter-wave built-in try thoughts for the receiver front-end.
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Additional resources for Millimeter-Wave Receiver Concepts for 77 GHz Automotive Radar in Silicon-Germanium Technology
Example text
Moreover, in ranging systems based on spread spectrum techniques, a large value of N is necessary to improve the autocorrelation function of the sequence which lowers the cross-correlation function. g. radar transmitters of other traffic participants [7]. 3 million traffic accidents cause more than 41,000 fatalities and an economical damage of more than 200 billion Euros per year. Human error is involved in over 90% of the overall accidents. g. helping the driver to maintain a safe speed and distance, keep within the lane, and prevent overtaking in critical situations.
7 Band structure of a SiGe heterojunction bipolar transistor. Due to the lower bandgap of the SiGe base region, a higher base doping with lower base resistance in comparison to Si bipolar transistors can be achieved Base −Δ Emitter Collector n+ Poly-Si Silicide p+-Poly p--Isolation −Δ p MonoSiGe:C SIC STI (Shallow Trench Iso) (Base) Buried Layer DT (Deep Trench Isolation) p--Substrate Fig. 1 Comparison of different transistor types available in b7hf200 UHS npn HS npn Transit frequency fT 200 GHz 180 GHz Max.
Dutartre, and A. Chantre, “SiGe HBTs featuring fT > 400 GHz at room temperature,” in Proc. Bipolar/BiCMOS Circuits Technol. Meeting, Monterey, CA, Oct. 2008, pp. 121–124. 7. J. D. Cressler, Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits, and Applications of SiGe and Si Strained-Layer Epitaxy. CRC Press, 2006. 8. ——, “SiGe HBT technology: A new contender for Si-based RF and microwave circuit applications,” IEEE Trans. Microw. , vol. 46, no. 5, pp. 572–589, May 1998. 9.
Millimeter-Wave Receiver Concepts for 77 GHz Automotive Radar in Silicon-Germanium Technology by Dietmar Kissinger
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